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2SK1167, 2SK1168
Silicon N Channel MOS FET
REJ03G0915-0200 (Previous: ADE-208-1253) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
* * * * * Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter
Outline
RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P)
D G 1. Gate 2. Drain (Flange) 3. Source
1
2
S 3
Rev.2.00 Sep 07, 2005 page 1 of 6
2SK1167, 2SK1168
Absolute Maximum Ratings
(Ta = 25C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW 10 s, duty cycle 1% 2. Value at TC = 25C 2SK1167 2SK1168 VGSS ID ID(pulse)* IDR 2 Pch* Tch Tstg
1
Symbol VDSS
Ratings 450 500 30 15 60 15 100 150 -55 to +150
Unit V V A A A W
C C
Electrical Characteristics
(Ta = 25C)
Item Drain to source breakdown voltage 2SK1167 2SK1168 Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr Min 450 500 30 -- -- 2.0 -- -- 8 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.25 0.30 13 2050 600 75 30 110 150 70 1.0 500 Max -- -- 10 250 3.0 0.36 0.40 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns Test conditions ID = 10 mA, VGS = 0 IG = 100 A, VDS = 0 VGS = 25 V, VDS = 0 VDS = 360 V, VGS = 0 VDS = 400 V, VGS = 0 ID = 1 mA, VDS = 10 V 3 ID = 8 A, VGS = 10 V * ID = 8 A, VDS = 10 V * VDS = 10 V, VGS = 0, f = 1 MHz ID = 8 A, VGS = 10 V, RL = 3.75
3
Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain 2SK1167 current 2SK1168 Gate to source cutoff voltage Static drain to source on 2SK1167 state resistance 2SK1168 Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 3. Pulse test
IF = 15 A, VGS = 0 IF = 15 A, VGS = 0, diF/dt = 100 A/s
Rev.2.00 Sep 07, 2005 page 2 of 6
2SK1167, 2SK1168
Main Characteristics
Power vs. Temperature Derating
100 150 30
Maximum Safe Operation Area
Channel Dissipation Pch (W)
Drain Current ID (A)
D
10 3 1.0 0.3 Ta= 25C 0.1 1 3
C
PW
10
=
10
0 s
s
1
10 m s
100
O
m
pe
s
ra
tio
n
(1
(T
C
=
Sh o
50
Operation in this area is limited by RDS (on)
25
t)
C
)
2SK1168 2SK1167 30 100 300 1,000
0
50
100
150
10
Case Temperature TC (C)
Drain to Source Voltage VDS (V)
Typical Output Characteristics
20 10 V 6V Pulse Test 12 5.0 V 20 5.5 V
Typical Transfer Characteristics
VDS = 20 V Pulse Test
Drain Current ID (A)
Drain Current ID (A)
16
16
12
8 4.5 V 4 VGS = 4 V 0 4 8 12 16 20
8 4 75C -25C TC = 25C
0
2
4
6
8
10
Drain to Source Voltage VDS (V)
Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current
5 2 1.0 0.5 VGS = 10 V Pulse Test
Drain to Source Saturation Voltage VDS (on) (V)
10 Pulse Test 20 A 6
8
4 2
10 A ID = 5 A
Static Drain to Source on State Resistance RDS(on) ()
Drain to Source Saturation Voltage vs. Gate to Source Voltage
0.2 0.1 0.05 1 2 5 10 20
15 V
0
4
8
12
16
20
50
100
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 3 of 6
2SK1167, 2SK1168
Static Drain to Source on State Resistance vs. Temperature
1.0 VGS = 10 V Pulse Test ID = 20 A
Static Drain to Source on State Resistance RDS (on) ()
Forward Transfer Admittance vs. Drain Current
Forward Transfer Admittance yfs (S)
50 20 10 5 VDS = 20 V Pulse Test -25C TC = 25C 75C
0.8
0.6
0.4 5A 0.2
10 A
2 1.0 0.5 0.2
0 -40
0
40
80
120
160
0.5
1.0
2
5
10
20
Case Temperature TC (C)
Drain Current ID (A)
Body to Drain Diode Reverse Recovery Time
Reverse Recovery Time trr (ns)
5,000 2,000 1,000 500 di/dt = 100 A/s, Ta = 25C VGS = 0 Pulse Test 10,000
Typical Capacitance vs. Drain to Source Voltage
VGS = 0 f = 1 MHz
Capacitance C (pF)
Ciss 1,000 Coss
200 100 50 0.2
100
Crss 10 0.5 1.0 2 5 10 20 0 10 20 30 40 50
Reverse Drain Current IDR (A)
Drain to Source Voltage VDS (V)
Dynamic Input Characteristics
Drain to Source Voltage VDS (V)
500 VDD = 100 V 400 VDS 300 250 V 400 V VGS 12 16 20 1,000
Switching Characteristics
Gate to Source Voltage VGS (V)
VGS = 10 V, VDD 30 V PW = 2 s, duty < 1% t d (off) tr tf
Switching Time t (ns)
500 200 100 50
200 100 VDD = 400 V 250 V 100 V 20 40 60 ID = 15 A
8 4
t d (on) 20 10 0.5
0
80
0 100
1.0
2
5
10
20
50
Gate Charge Qg (nc)
Drain Current ID (A)
Rev.2.00 Sep 07, 2005 page 4 of 6
2SK1167, 2SK1168
Reverse Drain Current vs. Source to Drain Voltage
20
Reverse Drain Current IDR (A)
16
Pulse Test
12
8
4
5 V, 10 V VGS = 0, -10 V
0
0.4
0.8
1.2
1.6
2.0
Source to Drain Voltage VSD (V)
Normalized Transient Thermal Impedance S (t)
Normalized Transient Thermal Impedance vs. Pulse Width
3 D=1 0.5 0.3 TC = 25C
1.0
0.2
0.1
0.05
0.1
0.02 e 1 0.03 0.0 t Puls Sho 1
0.01 10 100 1m 10 m
ch-c (t) = S(t) * ch-c ch-c = 1.25C/W, TC = 25C PDM D = PW T PW T 100 m 1 10
Pulse Width PW (S)
Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T RL Vout 50 Vin = 10 V . VDD = 30 V . td (on) Vin 10 %
Waveforms 90 %
10 % 90 % tr 90 % td (off)
10 %
tf
Rev.2.00 Sep 07, 2005 page 5 of 6
2SK1167, 2SK1168
Package Dimensions
JEITA Package Code
SC-65
RENESAS Code
PRSS0004ZE-A
Package Name TO-3P / TO-3PV
MASS[Typ.] 5.0g
5.0 0.3
Unit: mm
4.8 0.2 1.5
15.6 0.3
0.5
1.0
3.2 0.2
14.9 0.2
19.9 0.2
1.6 1.4 Max 2.0 2.8
2.0
1.0 0.2 3.6 0.9 1.0
18.0 0.5
0.6 0.2
5.45 0.5
5.45 0.5
Ordering Information
Part Name 2SK1167-E 2SK1168-E 360 pcs 360 pcs Quantity Box (Tube) Box (Tube) Shipping Container
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product.
Rev.2.00 Sep 07, 2005 page 6 of 6
0.3
Sales Strategic Planning Div.
Keep safety first in your circuit designs!
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(c) 2005. Renesas Technology Corp., All rights reserved. Printed in Japan.
Colophon .3.0

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